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DMG1013T-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DMG1013T-HXY product

DMG1013T-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-52320V

The DMG1013T is a compact P-Channel MOSFET designed for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • High-current applications exceeding 0.66A
  • High-temperature environments without adequate cooling

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
-20 V
ID
-0.66 A
RDS(ON)
< 560 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

f77489b215305bd8d9c4fc0f75fa8796_2403261740_HXY-MOSFET-DMG1013T-HXY_C22367055.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DMG1013T-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, optimized for low-voltage applications.