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DMG3401LSN-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DMG3401LSN-HXY product

DMG3401LSN-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-2330V

The DMG3401LSN is a -30V, -6A P-Channel MOSFET in a SOT-23 package, designed for efficient switching and power management.

Best for

  • Battery protection circuits
  • Load switching
  • PWM control

Avoid if

  • High-power applications exceeding 1.32W dissipation
  • Applications requiring N-Channel polarity

Check before use

  • Thermal design
  • Gate drive voltage compatibility

Key specifications

VDS
-30 V
ID
-6 A
RDS(ON)
<35 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

1ead6e9f4db579d9a5e09813acecb49e_2403261736_HXY-MOSFET-DMG3401LSN-HXY_C22366662.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DMG3401LSN-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, optimized for low RDS(ON) and low gate charge.