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DMG6968UTS-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DMG6968UTS-HXY product

DMG6968UTS-HXY

MOSFETs - Arrays

MOSFETDual N-ChannelTrench

The DMG6968UTS is a dual N-channel enhancement mode MOSFET in a TSSOP-8 package, optimized for low-voltage power switching and load management.

Best for

  • Battery protection
  • Load switching
  • UPS

Avoid if

  • High-voltage applications exceeding 20V

Check before use

  • Thermal design for continuous 7A operation

Key specifications

VDS
20V
ID
7A
RDS(ON)
14mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

1e9bf87afa861b17ca09cf4a08e80ae9_2403261743_HXY-MOSFET-DMG6968UTS-HXY_C22367364.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DMG6968UTS-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel trench MOSFET designed for high-density, small-power switching applications.