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DMN10H170SVT-7 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DMN10H170SVT-7 product

DMN10H170SVT-7

MOSFETs - Single

MOSFETN-Channel100VTSOT26

The DMN10H170SVT-7 is a 100V N-channel MOSFET in a compact TSOT26 package, optimized for high-efficiency power management and switching applications.

Best for

  • Power management functions
  • Battery-operated systems
  • Relay and solenoid drivers

Avoid if

  • Applications requiring currents significantly higher than 2.6A
  • Designs where space is not a constraint and higher power dissipation is needed

Check before use

  • Thermal design for the TSOT26 package
  • Gate drive voltage levels

Key specifications

VDS
100 V
ID
2.6 A
RDS(on)
160 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ManagementBattery Systems

Datasheet

poYBAGNW_RiAaCKTAAgOBlGiqiE208.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DMN10H170SVT-7: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode MOSFET designed by Diodes Incorporated, featuring a 100V drain-source breakdown voltage and low on-state resistance.