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DMN2019UTS-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DMN2019UTS-HXY product

DMN2019UTS-HXY

MOSFETs - Arrays

MOSFETDual N-ChannelTSSOP-8

The DMN2019UTS is a dual N-channel MOSFET in a TSSOP-8 package, designed for efficient power switching and load management in compact electronics.

Best for

  • Small power switching
  • Load management

Avoid if

  • High-power applications exceeding 1.25W dissipation

Check before use

  • Thermal design and gate drive voltage levels

Key specifications

VDS
20V
ID
7A
RDS(ON)
14mΩ (at 4.5V)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerGeneral

Datasheet

7e3e5f880f001f4167b58ed15de63198_2403261743_HXY-MOSFET-DMN2019UTS-HXY_C22367366.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DMN2019UTS-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET featuring trench technology for high cell density and low on-resistance.