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DMN26D0UFB4-7-HXY AI Analysis:
Specs, Applications & Alternatives

AI summary

DMN26D0UFB4-7-HXY product

DMN26D0UFB4-7-HXY

MOSFETs - Single

N-ChannelMOSFET20VDFN1006

The DMN26D0UFB4-7 is a compact N-Channel MOSFET designed for low-voltage switching and battery protection in portable devices.

Best for

  • Battery protection
  • Load switching
  • Portable electronics

Avoid if

  • High-power applications
  • High-temperature environments exceeding 150°C

Check before use

  • Gate drive voltage levels
  • Thermal management

Key specifications

VDS
20 V
ID
0.7 A
RDS(on)
<350 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerConsumer

Datasheet

564cd4ffac47ffb604300e782a7292c9_2305231118_HXY-MOSFET-DMN26D0UFB4-7-HXY_C6285768.pdf

800 KB

Datasheet AI

CAD Models

EDA symbol, PCB footprint, and 3D model for this component. Supported tools include Altium, KiCad, Eagle, and more.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, optimized for low-voltage applications.