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DMN3110S-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DMN3110S-HXY product

DMN3110S-HXY

FETs

N-ChannelMOSFET30VSOT-23

The DMN3110S is a 30V, 4A N-Channel MOSFET in a SOT-23 package, optimized for battery protection and load switching.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • High-power applications exceeding 1W dissipation

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
4 A
RDS(on)
29 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

8b7e99a81d47f6abf4688fc84d237be5_2403261743_HXY-MOSFET-DMN3110S-HXY_C22367347.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DMN3110S-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for low-voltage switching applications.