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DMN60H080DS-13 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DMN60H080DS-13 product

DMN60H080DS-13

MOSFETs - Single

600VN-ChannelSOT23MOSFET

The DMN60H080DS-13 is a 600V N-channel MOSFET in a SOT23 package, designed for high-voltage small-signal and level-shifting applications.

Best for

  • Small-signal switching
  • Level shifting
  • Low-power DC-DC conversion

Avoid if

  • High-current power switching
  • Applications requiring high thermal dissipation

Check before use

  • Thermal design on PCB
  • Gate drive voltage levels

Key specifications

Drain-Source Voltage
600 V
Continuous Drain Current
80 mA
On-Resistance
100 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
Level 1
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ManagementDC-DC Converters

Datasheet

fdb26f886859315bb70e52a15a542335_2308101722_Diodes-Incorporated-DMN60H080DS-13_C6934856.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DMN60H080DS-13: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode MOSFET featuring 600V drain-source breakdown voltage, suitable for power management and level shifting.