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DMT3020LSD-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DMT3020LSD-HXY product

DMT3020LSD-HXY

MOSFETs

Dual N-ChannelMOSFETSOP-8

The DMT3020LSD is a dual N-channel MOSFET in an SOP-8 package, optimized for low-voltage switching and battery protection.

Best for

  • Battery management systems
  • Low-voltage power switching

Avoid if

  • High-power applications exceeding 1.5W dissipation

Check before use

  • Thermal design and gate drive compatibility

Key specifications

Vdss
30 V
Id
8.5 A
RDS(on)
18 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

12eaa6d42238b284a0031b6d8c2d52ee_2405211553_HXY-MOSFET-DMT3020LSD-HXY_C22366809.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DMT3020LSD-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET utilizing trench technology, designed for efficient switching at low gate voltages.