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DMT69M8LSS-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DMT69M8LSS-HXY product

DMT69M8LSS-HXY

MOSFETs - Single

N-ChannelMOSFET60VSOP-8

The DMT69M8LSS is a 60V, 10A N-Channel MOSFET in an SOP-8 package, optimized for battery protection and switching circuits.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring currents significantly above 10A continuous

Check before use

  • Thermal design and PCB copper area for heat dissipation

Key specifications

VDS
60 V
ID
10 A
RDS(on)
13 mΩ (max)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

0ee9e55bc672be53aa4385c33f1e68f3_2403261737_HXY-MOSFET-DMT69M8LSS-HXY_C22366816.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DMT69M8LSS-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET designed for high-efficiency switching applications, featuring low RDS(ON) and trench technology.