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DNLS320E-13 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DNLS320E-13 product

DNLS320E-13

Transistors - Bipolar (BJT) - Single

NPNBJTSOT-223Low Saturation

The DNLS320E-13 is a high-performance NPN Bipolar Junction Transistor (BJT) designed for medium-power switching and amplification applications.

Best for

  • Medium power switching
  • Amplification

Avoid if

  • High voltage applications exceeding 20V

Check before use

  • Thermal dissipation requirements

Key specifications

VCEO
20 V
IC
3 A
VCE(SAT)
0.18 V
hFE
>400

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
Level 1
ECCN
EAR99
HTSUS
8541290075.0

Application

Power SwitchingAmplification

Datasheet

Diodes-Inc.-DNLS320E-13.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DNLS320E-13: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an epitaxial planar NPN transistor in a SOT-223 package, optimized for low saturation voltage and high current gain.