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DO05NG-C AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DO05NG-C product

DO05NG-C

FETs

N-channel MOSFET650 V5 ATO-252Trench MOSFET

DO05NG-C is a 650 V N-channel TO-252 MOSFET for high-voltage switching where a 5 A case-temperature-rated device and approximately 2.7 Ω maximum on-resistance are acceptable.

Best for

  • High-voltage low-current switching
  • Offline industrial power stages
  • Applications using a TO-252 MOSFET footprint

Avoid if

  • Low-loss high-current switching
  • Applications requiring confirmed automotive qualification
  • Designs needing confirmed RoHS or REACH status

Check before use

  • RDS(on) at operating junction temperature
  • Gate-drive voltage and transient limits
  • Thermal resistance to the final heatsinking arrangement
  • Reverse-recovery losses if the body diode commutates

Key specifications

Drain-source voltage
650 V
Continuous drain current
5 A at TC=25°C
Maximum RDS(on)
2.7 Ω at VGS=10 V, ID=2.5 A
Package
TO-252, 3 pins
Total gate charge
13 nC typ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Industrial high-voltage switchingOffline power circuits

Datasheet

e953e92070b641535ce22ccc402263ae_DO05NG-C.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DO05NG-C: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DO05NG-C is a DOINGTER N-channel trench power MOSFET in a 3-pin TO-252 package. It has a 650 V drain-source rating and is specified for 5 A continuous drain current at a case temperature of 25°C.