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DO2302D-Q AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DO2302D-Q product

DO2302D-Q

FETs

N-channel MOSFET20 V3 ASOT-23Low gate charge

DO2302D-Q is a 20 V N-channel SOT-23 MOSFET for low-voltage switching, specified for 3 A continuous current and 42 mΩ maximum RDS(on) at 4.5 V gate drive.

Best for

  • Low-voltage load switching
  • Compact 20 V MOSFET switching stages
  • Circuits with 2.5 V or 4.5 V gate drive

Avoid if

  • Drain-source voltage can exceed 20 V
  • The application requires documented automotive or safety qualification
  • Thermal conditions exceed the capability of a small SOT-23 PCB footprint

Check before use

  • Verify RDS(on) at the available gate-drive voltage
  • Derate current and power for ambient temperature and PCB copper area
  • Confirm package orientation: pin 1 gate, pin 2 drain, pin 3 source

Key specifications

Drain-source voltage
20 V
Continuous drain current
3.0 A at TA = 25 °C
On-resistance
42 mΩ max at VGS = 4.5 V, ID = 3 A
Package
SOT-23, 3-pin
Total gate charge
3.61 nC typ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingConsumer electronics switchingGeneral load control

Datasheet

6a31a3e81911b94617871ab823c0cb18_DO2302D-Q.pdf

800 KB

Datasheet AI

CAD Models

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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DO2302D-Q is a DOINGTER N-channel trench MOSFET in a 3-pin SOT-23 package. It is rated for 20 V drain-source voltage and 3.0 A continuous drain current at TA = 25 °C.