DO2310A AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DO2310A product

DO2310A

FETs

N-channel MOSFET60 V3.5 ASOT-23low gate charge

DO2310A is a 60 V N-channel SOT-23 MOSFET for compact switching circuits, with 3.5 A continuous current capability and 80 mΩ maximum RDS(on) at a 10 V gate drive.

Best for

  • Compact low-side switching
  • Moderate-current 60 V switching
  • Space-constrained power control

Avoid if

  • A qualified automotive-grade MOSFET is required
  • Compliance documentation is mandatory but unavailable
  • Low-loss operation requires substantially lower RDS(on)

Check before use

  • Verify VGS drive level
  • Calculate conduction and switching losses
  • Use the specified PCB thermal assumptions carefully

Key specifications

Drain-source voltage
60 V
Continuous drain current
3.5 A
On-resistance
80 mΩ max at VGS = 10 V, ID = 2 A
Package
SOT-23, 3 pins
Total gate charge
14.3 nC typ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Compact power switchingGeneral-purpose load switching

CAD Models

Download ECAD models for DO2310A: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DO2310A is a DOINGTER N-channel trench MOSFET in a 3-pin SOT-23 package. Its drain-source voltage rating is 60 V.