DO2310D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DO2310D product

DO2310D

FETs

N-channel MOSFET60 V3 ASOT-23100 mΩ max

DO2310D is a 60 V N-channel SOT-23 MOSFET intended for low-power switching, with 3 A continuous drain-current rating at 25°C ambient and 100 mΩ maximum RDS(on) at a 10 V gate drive.

Best for

  • Low-side switching below 60 V
  • Space-constrained low-power MOSFET switching

Avoid if

  • Applications requiring guaranteed low RDS(on) with gate drive below 4.5 V
  • High-current designs without thermal validation

Check before use

  • Gate-drive voltage and RDS(on) test condition
  • Ambient-temperature current derating
  • SOT-23 thermal path and copper area

Key specifications

MOSFET type
N-channel
Drain-source voltage
60 V
Continuous drain current
3 A at TA=25°C
RDS(on)
100 mΩ max at VGS=10 V, ID=3 A
Package
SOT-23, 3 pins

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General-purpose load switchingLow-side power switching

CAD Models

Download ECAD models for DO2310D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DO2310D is a DOINGTER single N-channel trench MOSFET in a 3-pin SOT-23 package. Its drain-source voltage rating is 60 V.