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DO2310DA AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DO2310DA product

DO2310DA

FETs

N-channel MOSFET60 V3.2 ASOT-23-3Low gate charge

DO2310DA is a compact 60 V N-channel MOSFET for low-power switching, with 3.2 A continuous-current rating and 100 mΩ maximum RDS(on) at a 10 V gate drive.

Best for

  • Compact 60 V low-side switching
  • General-purpose load switching
  • Low gate-charge switching circuits

Avoid if

  • A qualified automotive or safety-certified MOSFET is required
  • Very low conduction loss is required at low gate-drive voltage
  • Thermal margin is limited in a small PCB footprint

Check before use

  • Confirm RDS(on) at the actual gate-drive voltage
  • Calculate conduction and switching losses
  • Confirm compliance and lifecycle requirements with the supplier

Key specifications

MOSFET type
N-channel
Drain-source voltage
60 V
Continuous drain current
3.2 A at TA=25°C
RDS(on)
100 mΩ max at VGS=10 V, ID=3 A
Gate charge
5.1 nC typ
Package
SOT-23-3

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-side load switchingPortable electronic equipmentGeneral switching circuits

Datasheet

ca2ca5a7d8a51155b8cdfc7574a35df0_DO2310DA.pdf

800 KB

Datasheet AI

CAD Models

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EDA Symbol
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DO2310DA is a DOINGTER N-channel trench MOSFET in a SOT-23-3 package. It has a 60 V drain-source rating and is intended for general low-side or load-switching applications.