DO3400B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DO3400B product

DO3400B

MOSFETs

N-channel MOSFET30 VSOT-23low RDS(on)

DO3400B is a 30 V N-channel MOSFET in SOT-23 for compact low-voltage switching. It offers low on-resistance and a typical total gate charge of 4.8 nC.

Best for

  • compact low-voltage load switching
  • power-management switching stages
  • applications using a 4.5 V or 10 V gate drive

Avoid if

  • the circuit requires a drain-source rating above 30 V
  • the application cannot provide adequate SOT-23 thermal dissipation

Check before use

  • maximum drain transient voltage
  • gate-source voltage limits
  • RDS(on) at the actual gate-drive voltage
  • continuous and pulsed thermal conditions

Key specifications

Channel
N-channel MOSFET
VDS
30 V
ID
5.8 A at TA=25°C
Package
SOT-23, 3 pins
RDS(on)
26 mΩ max. at VGS=10 V, ID=4.2 A

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Load switchingDC power management

CAD Models

Download ECAD models for DO3400B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DO3400B is an N-channel trench MOSFET with a 30 V drain-source rating, a 3-pin SOT-23 package, and a 5.8 A continuous drain-current rating at TA=25°C.