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DO3400BA AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DO3400BA product

DO3400BA

FETs

N-channel MOSFET30 VSOT-23-3Low RDS(on)

DO3400BA is a 30 V N-channel MOSFET in SOT-23-3 for low-voltage power switching. Its maximum RDS(on) is 24 mΩ with a 10 V gate drive.

Best for

  • Low-voltage load switching
  • Compact SOT-23 power stages

Avoid if

  • Drain-source voltage can exceed 30 V
  • Application requires documented compliance or thermal-resistance data

Check before use

  • Maximum VDS transient voltage
  • RDS(on) at the available gate-drive voltage
  • PCB thermal dissipation

Key specifications

Drain-source voltage
30 V
Continuous drain current
5.8 A at TA=25°C
Maximum RDS(on)
24 mΩ at VGS=10 V, ID=5.8 A
Package
SOT-23-3

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingLoad switching

Datasheet

a937df53a34082f6888f77b7998464a4_DO3400BA.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DO3400BA: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DO3400BA is a DOINGTER N-channel trench MOSFET supplied in a 3-pin SOT-23-3 package. It has a 30 V drain-source rating and is intended for low-voltage switching.