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DO3400DA AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DO3400DA product

DO3400DA

FETs

N-channel MOSFET30 VSOT-23-3low RDS(on)low gate charge

DO3400DA is a 30 V N-channel SOT-23-3 MOSFET for low-voltage switching, with 30 mΩ maximum RDS(on) at 10 V gate drive and 5.5 A continuous current rating at TA=25°C.

Best for

  • Low-voltage load switching
  • Compact power switching
  • 3.3 V to 10 V gate-drive designs after loss verification

Avoid if

  • Drain-source voltage can exceed 30 V
  • Thermal design cannot support SOT-23-3 dissipation
  • A guaranteed automotive or compliance qualification is required

Check before use

  • Gate-drive voltage versus required RDS(on)
  • Conduction and switching loss
  • PCB copper area and junction temperature
  • Avalanche and transient protection requirements

Key specifications

Channel type
N-channel MOSFET
Drain-source voltage
30 V
Continuous drain current
5.5 A at TA=25°C
Maximum RDS(on)
30 mΩ at VGS=10 V, ID=4 A
Package
SOT-23-3

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingPortable consumer electronicsGeneral load switching

Datasheet

13ac0943ea881538f1a11c0fa6727028_DO3400DA.pdf

800 KB

Datasheet AI

CAD Models

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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DO3400DA is a DOINGTER N-channel trench MOSFET in an SOT-23-3 package. Its drain-source voltage rating is 30 V and its gate-source voltage limit is ±12 V.