DO3407B Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DO3407B product

DO3407B is a -30 V P-channel SOT-23-3 MOSFET for low-voltage power switching, specified with 55 mΩ maximum RDS(on) at VGS=-10 V.

Best for

Low-voltage P-channel high-side switching
Compact SOT-23 power switching designs

Avoid if

Applications requiring drain-source voltage beyond -30 V
Designs that cannot tolerate increased on-resistance at lower gate drive
High continuous-power operation without verified thermal layout

Check before use

Verify VGS remains within ±20 V under all transient conditions
Use worst-case RDS(on), not typical resistance, for loss calculations
Confirm junction temperature against the 150 °C maximum rating

Key specifications

Channel type: P-Channel
Drain-source voltage: -30 V
Continuous drain current: -4.1 A at TA=25°C
Maximum RDS(on): 55 mΩ at VGS=-10 V, ID=-4 A
Package: SOT-23-3

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Low-voltage power switchingGeneral electronic switching

Datasheet

1918c5f3b6e4e52304b5c569f0ca800c_DO3407B.pdf

800 KB

CAD Models

Download ECAD models for DO3407B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DO3407B is a DOINGTER P-channel trench MOSFET in a 3-pin SOT-23 package. Its drain-source voltage rating is -30 V.