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DO3N10B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DO3N10B product

DO3N10B

MOSFETs - Single

N-channel MOSFET100 V3 ASOT-23-3Low gate charge

DO3N10B is a compact 100 V N-channel MOSFET for low-current switching where SOT-23-3 size and low gate charge are useful.

Best for

  • Compact 100 V low-side switching
  • General-purpose low-current MOSFET switching
  • Designs with 4.5 V or 10 V gate drive

Avoid if

  • Low-loss power stages requiring substantially lower RDS(on)
  • Applications needing documented automotive or safety qualification
  • Designs without adequate SOT-23 thermal copper area

Check before use

  • Confirm gate-drive voltage under all operating conditions
  • Calculate conduction loss at operating current and temperature
  • Verify drain-voltage transient margin below 100 V
  • Validate PCB thermal performance

Key specifications

Drain-source voltage
100 V
Continuous drain current
3 A
RDS(on)
280 mΩ max at VGS=10 V, ID=2 A
Package
SOT-23-3
Total gate charge
5.2 nC typ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-side power switchingCompact industrial controlsGeneral electronic switching

Datasheet

589e6d2045720f8af46b7adbcce7dda1_DO3N10B.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DO3N10B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DO3N10B is a DOINGTER N-channel trench MOSFET in a 3-pin SOT-23-3 package. It is rated for 100 V drain-source voltage and 3 A continuous drain current at TA=25 °C.