DO3N10SA Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DO3N10SA product

DO3N10SA is a 100 V N-channel SOT-23-3 MOSFET rated for 3 A continuous drain current at TA=25°C, with 286 mΩ maximum RDS(on) at a 10 V gate drive.

Best for

Low-current 100 V power switching
General-purpose low-side switching

Avoid if

A low RDS(on) device is required at gate voltages below 4.5 V
The application needs documented automotive, RoHS, REACH, or MSL qualification

Check before use

Use the 286 mΩ maximum RDS(on) value only for VGS=10 V and ID=2 A.
Use the 312 mΩ maximum value for the stated VGS=4.5 V, ID=1 A condition.
Confirm PCB thermal performance; RθJA is specified as 50 °C/W maximum.

Key specifications

MOSFET polarity: N-channel
Drain-source voltage: 100 V
Continuous drain current: 3 A at TA=25°C
On-resistance: 286 mΩ max at VGS=10 V, ID=2 A
Package: SOT-23-3

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Low-side power switchingGeneral-purpose switching

Datasheet

6126a4b14301cbe95b1ae44e9aedbde6_DO3N10SA.pdf

800 KB

CAD Models

Download ECAD models for DO3N10SA: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

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Design and risk insights

Questions & answers

DO3N10SA is a DOINGTER N-channel trench MOSFET in a 3-pin SOT-23-3 package. Its drain-source voltage rating is 100 V.