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DO5N06AA AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DO5N06AA product

DO5N06AA

MOSFETs - Single

N-channel MOSFET60 V5 ASOT-23-345 mΩ max.19 nC

DO5N06AA is a 60 V N-channel SOT-23 MOSFET for compact low-side or general switching designs, with 45 mΩ maximum RDS(on) at 10 V gate drive.

Best for

  • Compact low-side switching
  • General DC load switching
  • 10 V or 4.5 V gate-drive designs within thermal limits

Avoid if

  • Applications requiring verified automotive qualification
  • Designs with insufficient PCB thermal area
  • Circuits exceeding 60 V drain-source rating

Check before use

  • Maximum VDS transient margin
  • RDS(on) at the actual gate-drive voltage
  • Junction-temperature rise on the final PCB
  • Supplier lifecycle and compliance documentation

Key specifications

Drain-source voltage
60 V
Continuous drain current
5 A at TA=25°C
On-resistance
45 mΩ max. at VGS=10 V, ID=4 A
Package
SOT-23-3

Compliance & Environment

RoHS
-
REACH
-
MSL
MSL 3
ECCN
-
HTSUS
-

Application

Low-side load switchingCompact DC switching

Datasheet

9199ef4cc0952b76bcf0013af2011789_DO5N06AA.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DO5N06AA: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DO5N06AA is a DOINGTER N-channel trench MOSFET in a SOT-23-3 package. It is rated for 60 V drain-source voltage and 5 A continuous drain current at TA=25°C.