DO5N10BA Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DO5N10BA product

DO5N10BA is a compact 100 V N-channel MOSFET in SOT-23-3, specified for 5 A continuous current and up to 120 mΩ RDS(on) with a 10 V gate drive.

Best for

Compact low-side switching
General DC power control
100 V MOSFET switching where thermal margin is verified

Avoid if

A guaranteed low RDS(on) is required with gate drive below 4.5 V
The application exceeds SOT-23 thermal capability
Documented compliance or lifecycle status is mandatory

Check before use

Confirm on-resistance at operating junction temperature
Validate board-level thermal resistance and power dissipation
Keep VGS within the ±20 V absolute maximum rating

Key specifications

MOSFET type: N-channel
Drain-source voltage: 100 V
Continuous drain current: 5 A
RDS(on) at 10 V gate drive: 120 mΩ max
Package: SOT-23-3

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Low-side power switchingGeneral DC load control

Datasheet

cfddb3eb2e70084a3253277e11a9d5a0_DO5N10BA.pdf

800 KB

CAD Models

Download ECAD models for DO5N10BA: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DO5N10BA is a DOINGTER N-channel trench MOSFET in a 3-pin SOT-23-3 package. It has a 100 V drain-source rating and a ±20 V gate-source voltage limit.