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DOB14N10 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOB14N10 product

DOB14N10

FETs

N-channel MOSFET100 VTO-2634 mΩ140 A

DOB14N10 is a 100 V N-channel TO-263 MOSFET rated for up to 140 A continuous drain current at TC = 25°C, with 4 mΩ maximum RDS(on) at a 10 V gate drive.

Best for

  • 100 V low-side power switching
  • High-current DC-DC power stages
  • Industrial power-control circuits

Avoid if

  • A guaranteed low RDS(on) is required with gate drive below 10 V
  • Thermal verification cannot be performed
  • Formal automotive or compliance qualification is required without separate evidence

Check before use

  • Actual case and junction temperature
  • Gate-drive amplitude and gate-loop layout
  • SOA under transient voltage and current
  • TO-263 thermal land pattern and heatsinking

Key specifications

Drain-source voltage
100 V
Continuous drain current
140 A at TC = 25°C
On-resistance
4 mΩ max at VGS = 10 V, ID = 20 A
Package
TO-263, 3-pin
Total gate charge
80 nC typ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power conversionIndustrial switchingMotor-drive power stages

Datasheet

3dfe190d7f02725392a59de9a8cd5ff0_DOB14N10.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOB14N10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOB14N10 is a DOINGTER N-channel power MOSFET in a TO-263 package. Its datasheet specifies a 100 V drain-source rating and low on-resistance for power-switching use.