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DOD100N03 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD100N03 product

DOD100N03

MOSFETs - Single

N-channel MOSFET30 VTO-252low RDS(on)power switching

DOD100N03 is a 30 V N-channel TO-252 MOSFET specified for low-voltage power switching, with 4 mΩ maximum on-resistance at 10 V gate drive.

Best for

  • Low-voltage power switching
  • Applications with 10 V gate drive
  • Compact TO-252 power stages

Avoid if

  • Drain-source voltage can exceed 30 V
  • A qualified automotive or formal compliance status is required
  • PCB footprint has not been verified against the delivered package outline

Check before use

  • Validate transient voltage margin and avalanche conditions
  • Calculate conduction and switching losses at actual gate drive
  • Confirm thermal performance using the case-to-heatsink and PCB design

Key specifications

Drain-source voltage
30 V
Continuous drain current
100 A at TC=25°C
RDS(on), maximum
4 mΩ at VGS=10 V, ID=24 A
Package
TO-252, 3 pins
Total gate charge
24 nC typ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingLoad switchingPower management circuits

Datasheet

915edbb807e445cc86eb62721171d064_DOD100N03.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD100N03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD100N03 is a DOINGTER N-channel trench power MOSFET supplied in a 3-pin TO-252 package. It is rated for 30 V drain-source voltage and 100 A continuous drain current at a 25°C case temperature.