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DOD120N03 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD120N03 product

DOD120N03

MOSFETs - Single

N-channel MOSFET30 VTO-2524 mΩpower switching

DOD120N03 is a 30 V N-channel TO-252 power MOSFET specified for low-resistance switching, with 4 mΩ maximum RDS(on) at 10 V gate drive.

Best for

  • Low-voltage power switching
  • Synchronous switching with 10 V gate drive
  • Compact TO-252 power stages

Avoid if

  • Drain-source voltage can approach or exceed 30 V including transients
  • A formally documented compliance or lifecycle status is required

Check before use

  • RDS(on) at the actual gate-drive voltage
  • Drain voltage overshoot and avalanche exposure
  • Thermal path from TO-252 tab to PCB copper
  • Actual package outline variant and land pattern

Key specifications

Drain-source voltage
30 V
Continuous drain current
120 A at TC=25°C
RDS(on)
4 mΩ max at VGS=10 V, ID=30 A
Package
TO-252, 3 leads

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingDC-DC convertersMotor and load switching

Datasheet

b9befea37f1e424ea3aa3f4cea985cdc_DOD120N03.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD120N03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD120N03 is a DOINGTER N-channel trench power MOSFET supplied in a three-lead TO-252 package. It has a 30 V drain-source rating and a ±20 V gate-source rating.