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DOD120N04 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD120N04 product

DOD120N04

FETs

N-channel MOSFET40 VTO-2523.5 mΩ max120 A

DOD120N04 is a 40 V N-channel TO-252 power MOSFET with low specified on-resistance: 3.5 mΩ maximum at 10 V gate drive and 30 A.

Best for

  • Low-voltage power switching where a 40 V N-channel MOSFET is suitable
  • Designs able to provide a 10 V gate drive for the lowest specified on-resistance

Avoid if

  • The drain-source voltage can approach or exceed 40 V
  • Compliance, lifecycle, or exact mechanical dimensions must be confirmed before release

Check before use

  • RDS(on) at the actual gate-drive voltage and operating temperature
  • TO-252 PCB and thermal design
  • Safe operating area and transient conditions

Key specifications

Drain-source voltage
40 V
Continuous drain current
120 A at TC=25 °C
Maximum RDS(on)
3.5 mΩ at VGS=10 V, ID=30 A
Package
TO-252
Total gate charge
64 nC typ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Datasheet

471c334b92aabaf9bfb632bca2a2fbfe_DOD120N04.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD120N04: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD120N04 is a DOINGTER N-channel trench power MOSFET supplied in a TO-252 package. It has a 40 V drain-source rating and a specified maximum junction temperature of 150 °C.