DOD12N10 Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DOD12N10 product

DOD12N10 is a 100 V N-channel TO-252 MOSFET for power-switching designs where approximately 120 mΩ maximum RDS(on) at 10 V gate drive is acceptable.

Best for

100 V low-side power switching
Moderate-current DC load switching
Circuits with approximately 10 V gate drive

Avoid if

A verified lifecycle or compliance declaration is mandatory
The design requires a guaranteed low RDS(on) at gate voltages below 10 V
Package thermal data beyond junction-to-case resistance is required

Check before use

Confirm RDS(on) at actual VGS and junction temperature
Check SOA for the pulse duration and drain voltage
Validate PCB copper area and case thermal connection

Key specifications

Drain-source voltage: 100 V
Continuous drain current: 11.3 A at TC=25°C
On-resistance: 120 mΩ max at VGS=10 V, ID=8 A
Package: TO-252, 3 pins
Total gate charge: 16.8 nC typ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power switchingDC load controlGeneral electronic switching

Datasheet

76aaf978ff3bb92d151e197f6258090b_DOD12N10.pdf

800 KB

CAD Models

Download ECAD models for DOD12N10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD12N10 is a DOINGTER N-channel trench MOSFET in a 3-pin TO-252 package. It has a 100 V drain-source rating and is intended for power switching.