DOD12P10 Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DOD12P10 product

DOD12P10 is a -100 V P-channel MOSFET with -12 A continuous drain-current rating at 25 C and 200 mOhm maximum on-resistance at VGS=-10 V.

Best for

P-channel high-side switching
DC load switching
Power control circuits within the rated voltage and current limits

Avoid if

The design requires a confirmed compliance or lifecycle status
The application needs package dimensions that are not available

Check before use

Thermal resistance and board heat spreading
Gate-source voltage margin
Current derating at the actual case temperature
Pinout and mechanical footprint

Key specifications

Channel: P-channel
VDS: -100 V
Continuous ID at TC=25 C: -12 A
RDS(on): 200 mOhm max. at VGS=-10 V, ID=-5 A
Package: TO-252, 3 pins

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power switchingLoad switching

Datasheet

a4b113bf62197c51315196063b39d273_DOD12P10.pdf

800 KB

CAD Models

Download ECAD models for DOD12P10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD12P10 is a DOINGTER P-channel trench MOSFET in a three-pin TO-252 package. Its drain-source voltage rating is -100 V.