For BusinessPricing
Request a demo

DOD13P06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD13P06 product

DOD13P06

FETs

P-channel MOSFET-60 V-13 ATO-25290 mΩ

DOD13P06 is a -60 V P-channel TO-252 MOSFET for power switching, specified for -13 A continuous drain current and up to 90 mΩ RDS(on) at a -10 V gate drive.

Best for

  • Negative-rail high-side switching
  • Moderate-current power switching where a P-channel MOSFET is suitable
  • TO-252 surface-mount power designs

Avoid if

  • A guaranteed low RDS(on) is required with gate drive weaker than -4.5 V
  • Package mechanical variant has not been confirmed
  • Compliance or lifecycle documentation is mandatory

Check before use

  • Confirm the TO-252 footprint and drain-tab connection
  • Calculate conduction and switching losses at maximum junction temperature
  • Keep VGS within the ±20 V absolute maximum rating

Key specifications

Channel
P-Channel
Drain-source voltage
-60 V
Continuous drain current
-13 A at TC=25 °C
RDS(on)
90 mΩ max at VGS=-10 V, ID=-12 A
Package
TO-252

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingLoad switchingPower-management circuits

Datasheet

3126de7d5e0400add11c0d56224cea72_DOD13P06.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD13P06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD13P06 is a DOINGTER P-channel trench MOSFET in a TO-252 package. It has a -60 V drain-source rating and is specified for -13 A continuous drain current at TC=25 °C.