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DOD150N03 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD150N03 product

DOD150N03

MOSFETs - Single

30 VN-channel MOSFETTO-2523.3 mOhm150 A

DOD150N03 is a 30 V N-channel TO-252 MOSFET specified for low-voltage high-current switching, with 3.3 mOhm maximum RDS(on) at a 10 V gate drive.

Best for

  • Low-voltage power switching
  • High-current switching with controlled case temperature

Avoid if

  • Drain-source voltage can approach or exceed 30 V
  • A verified lifecycle or compliance declaration is required

Check before use

  • RDS(on) at the actual gate-drive voltage and temperature
  • TO-252 PCB thermal design
  • Transient and avalanche conditions

Key specifications

Drain-source voltage
30 V
Continuous drain current
150 A at TC=25 C
On-resistance
3.3 mOhm max at VGS=10 V, ID=30 A
Package
TO-252

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingPower control stages

Datasheet

2f1446fe9aac6ab727fb5e9d72c612f3_DOD150N03.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD150N03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD150N03 is an N-channel trench MOSFET from DOINGTER in a TO-252 package. It has a 30 V drain-source rating and is specified with a maximum 3.3 mOhm on-resistance at VGS=10 V and ID=30 A.