For BusinessPricing
Request a demo

DOD18N20 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD18N20 product

DOD18N20

MOSFETs - Single

200 V MOSFETN-channel18 ATO-252power switching

DOD18N20 is a 200 V, 18 A N-channel MOSFET in TO-252 for general power-switching use, with 140 mΩ maximum RDS(on) specified at 10 V gate drive.

Best for

  • General 200 V power switching
  • Space-constrained TO-252 power stages

Avoid if

  • A verified RoHS, REACH, MSL, or lifecycle declaration is mandatory
  • The design requires a low-voltage gate-drive RDS(on) guarantee

Check before use

  • RDS(on) at actual junction temperature
  • Thermal path from TO-252 tab to PCB or heatsink
  • Exact package outline and land pattern

Key specifications

Drain-source voltage
200 V
Continuous drain current
18 A
Maximum RDS(on)
140 mΩ at VGS = 10 V, ID = 9 A
Package
TO-252

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingIndustrial electronic equipmentGeneral-purpose power circuits

Datasheet

5423d5916b42ced4a56a6b57e5ded71d_DOD18N20.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD18N20: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD18N20 is a DOINGTER N-channel power MOSFET in a 3-pin TO-252 package. It is rated for 200 V drain-source voltage and 18 A continuous drain current at TC = 25 °C.