DOD25N10 Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DOD25N10 product

DOD25N10 is a 100 V N-channel TO-252 MOSFET for low-side or general power switching, with 25 mΩ maximum RDS(on) specified at 10 V gate drive.

Best for

100 V low-side switching
General power-control circuits
Applications with 10 V gate drive

Avoid if

A guaranteed low RDS(on) value is required with gate drive below 4.5 V
Formal compliance, lifecycle, or qualification documentation is mandatory

Check before use

Use 25 mΩ maximum RDS(on) at VGS=10 V for conduction-loss calculations.
At VGS=4.5 V, RDS(on) is specified up to 30 mΩ at ID=10 A.
Validate TO-252 package outline and thermal layout.

Key specifications

Drain-source voltage: 100 V
Continuous drain current: 25 A at TC=25°C
On-resistance: 25 mΩ max at VGS=10 V, ID=10 A
Package: TO-252
Total gate charge: 11 nC typ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power switchingIndustrial controlConsumer power electronics

Datasheet

e792193723d5489c69c24de90568af19_DOD25N10.pdf

800 KB

CAD Models

Download ECAD models for DOD25N10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

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Alternative components

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Design and risk insights

Questions & answers

DOD25N10 is a DOINGTER N-channel power MOSFET rated for 100 V drain-source voltage. It is supplied in a 3-pin TO-252 package.