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DOD30100 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD30100 product

DOD30100

FETs

N-channel MOSFET30 V MOSFETTO-2524 mΩ100 A

DOD30100 is a 30 V N-channel TO-252 MOSFET for low-voltage high-current switching, with RDS(on) specified to 4 mΩ maximum at a 10 V gate drive.

Best for

  • Low-voltage power switching
  • High-current load switching
  • Applications with a 10 V MOSFET gate driver

Avoid if

  • Drain-source voltage can exceed 30 V
  • A guaranteed low RDS(on) is required with gate drive below 4.5 V
  • PCB footprint compatibility with either TO-252 outline has not been confirmed

Check before use

  • Maximum VDS including transients
  • Conduction and switching losses at operating temperature
  • Gate-drive voltage and gate resistance
  • TO-252 outline variant and solder footprint

Key specifications

Drain-source voltage
30 V
Continuous drain current
100 A at TC=25°C
RDS(on)
4 mΩ max at VGS=10 V, ID=24 A
Package
TO-252, 3 pins
Total gate charge
24 nC typical

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingDC motor and load controlIndustrial load switching

Datasheet

8f75a93b4493b1dcb2ac7187ef0f084e_DOD30100.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD30100: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD30100 is a DOINGTER N-channel trench power MOSFET in a 3-pin TO-252 package. It has a 30 V drain-source rating and is intended for low-voltage power switching.