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DOD30N03-L AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD30N03-L product

DOD30N03-L

Transistors

N-channel MOSFET30 V30 ATO-252Low RDS(on)Power switching

DOD30N03-L is a 30 V N-channel TO-252 MOSFET for low-voltage power switching, with 22 mΩ maximum RDS(on) at a 10 V gate drive.

Best for

  • Low-voltage power switching
  • Load switching with 4.5 V or 10 V gate drive
  • Space-conscious TO-252 power stages

Avoid if

  • Drain-source voltage can approach or exceed 30 V including transients
  • Thermal design cannot support the required conduction and switching losses
  • A verified compliance or lifecycle declaration is mandatory

Check before use

  • Maximum VDS transient margin
  • RDS(on) at the actual gate voltage and temperature
  • TO-252 package outline and PCB footprint
  • Thermal resistance from junction to the final application environment

Key specifications

Drain-source voltage
30 V
Continuous drain current
30 A at TC=25°C
On-resistance
22 mΩ max at VGS=10 V, ID=10 A
On-resistance at 4.5 V
25 mΩ max at VGS=4.5 V, ID=8 A
Package
TO-252, 3 pins

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingDC load control

Datasheet

88f58bf3acbc9de99c643024436ac4be_DOD30N03-L.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD30N03-L: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD30N03-L is a DOINGTER N-channel trench power MOSFET in a 3-pin TO-252 package. It has a 30 V drain-source voltage rating and a 30 A continuous drain-current rating at TC=25°C.