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DOD30N10 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD30N10 product

DOD30N10

Transistors

N-channel MOSFET100 V30 ATO-25230 mΩ maximumPower switching

DOD30N10 is a 100 V N-channel TO-252 MOSFET for low-side or power-switching designs requiring up to 30 A continuous current under the stated case-temperature conditions.

Best for

  • 100 V low-side switching
  • Compact TO-252 power stages
  • Moderate-current DC switching

Avoid if

  • The application requires a verified qualification or compliance status not stated in the datasheet
  • A package footprint cannot accommodate the documented outline variation
  • Voltage transients can approach or exceed 100 V without suppression

Check before use

  • Verify worst-case drain-source transient voltage
  • Verify gate drive at 4.5 V or 10 V as applicable
  • Calculate conduction and switching losses
  • Confirm thermal performance at the intended case temperature

Key specifications

Drain-source voltage
100 V
Continuous drain current
30 A at TC=25°C
Maximum RDS(on)
30 mΩ at VGS=10 V, ID=20 A
Package
TO-252
Typical total gate charge
65 nC

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingDC-DC converter switchingMotor and inductive load control

Datasheet

8c5dd14f489e3c28ffb66c7a8dece11b_DOD30N10.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD30N10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD30N10 is a DOINGTER N-channel trench power MOSFET in a TO-252 package. It has a 100 V drain-source rating and a 30 A continuous drain-current rating at TC=25°C.