DOD30P03 Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DOD30P03 product

DOD30P03 is a -30 V P-channel TO-252 MOSFET for low-side or high-side power switching where a negative gate drive is available.

Best for

Low-voltage power switching
Negative-gate-drive P-channel MOSFET circuits
TO-252 surface-mount designs

Avoid if

The circuit needs voltage blocking above 30 V
Gate drive cannot provide sufficient negative VGS
Compliance or lifecycle status must be documented

Check before use

Derate current for actual PCB and cooling conditions
Check switching behavior at the intended gate resistance and frequency
Confirm footprint dimensions from a package drawing

Key specifications

Channel type: P-Channel
Drain-source voltage: -30 V
Continuous drain current: -30 A at TC=25°C
RDS(on): 25 mΩ max at VGS=-10 V, ID=-12 A
Package: TO-252

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power switchingLoad switchingBattery-powered equipment

Datasheet

50ae43d5ee5e91b6d2cae489471568aa_DOD30P03.pdf

800 KB

CAD Models

Download ECAD models for DOD30P03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD30P03 is a DOINGTER P-channel trench MOSFET in a 3-pin TO-252 package. It has a -30 V drain-source rating and supports negative gate-source drive.