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DOD30P06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD30P06 product

DOD30P06

FETs

P-channel MOSFET-60 VTO-25235 mΩPower switching

DOD30P06 is a -60 V P-channel MOSFET in TO-252 for power and high-side switching where a negative gate drive is available.

Best for

  • P-channel high-side load switching
  • Moderate-voltage power paths
  • Applications with -4.5 V or -10 V gate drive

Avoid if

  • Drain-source voltage can approach or exceed -60 V
  • A verified logic-level loss figure below -4.5 V gate drive is required
  • Compliance or lifecycle documentation is mandatory but unavailable

Check before use

  • Worst-case RDS(on): 35 mΩ at VGS=-10 V or 40 mΩ at VGS=-4.5 V
  • Thermal path from the TO-252 tab to PCB or heatsink
  • Gate-source transient protection within ±20 V

Key specifications

Channel type
P-Channel
Drain-source voltage
-60 V
Continuous drain current
-30 A at TC=25°C
Maximum RDS(on)
35 mΩ at VGS=-10 V, ID=-15 A
Package
TO-252

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

High-side power switchingGeneral load switchingIndustrial power control

Datasheet

b15084d14f156315fb77942d2d87aac0_DOD30P06.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD30P06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD30P06 is a DOINGTER P-channel trench power MOSFET in a 3-pin TO-252 package. It has a -60 V drain-source rating and a -30 A continuous drain-current rating at TC=25°C.