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DOD33N10 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD33N10 product

DOD33N10

FETs

N-channel MOSFET100 V33 ATO-252SGT trench16 mΩ max.

DOD33N10 is a 100 V N-channel TO-252 MOSFET for power switching, specified at 33 A continuous current and 16 mΩ maximum RDS(on) with a 10 V gate drive.

Best for

  • 100 V low-side power switching
  • Compact TO-252 power stages
  • Applications with 10 V gate drive

Avoid if

  • A guaranteed logic-level drive below 4.5 V is required
  • Thermal design cannot support MOSFET dissipation
  • Verified lifecycle or compliance documentation is mandatory

Check before use

  • RDS(on) at the actual gate-drive voltage and operating temperature
  • Transient voltage margin below the 100 V VDS rating
  • PCB copper area and junction-to-ambient thermal performance

Key specifications

MOSFET type
N-channel
Drain-source voltage
100 V
Continuous drain current
33 A
RDS(on) at 10 V drive
12 mΩ typ., 16 mΩ max.
Package
TO-252

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingDC-DC convertersIndustrial loads

Datasheet

1f135e183cdb1fd0b5d665392a6ca429_DOD33N10.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD33N10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD33N10 is a DOINGTER N-channel power MOSFET made with SGT trench technology. It has a 100 V drain-source rating and is supplied in a 3-pin TO-252 package.