DOD50N02 Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DOD50N02 product

DOD50N02 is a 20 V N-channel TO-252 MOSFET with 8 mΩ maximum RDS(on) at 4.5 V gate drive and a 45 A continuous-current rating at TA=25 °C.

Best for

Low-voltage power switching
Applications with 4.5 V gate drive
Compact TO-252 power stages

Avoid if

Drain-source voltage can approach or exceed 20 V
Compliance documentation is mandatory but unavailable
Thermal performance cannot be validated on the target PCB

Check before use

Confirm worst-case VDS including transients
Calculate conduction loss using maximum RDS(on)
Validate PCB and heatsinking thermal resistance
Confirm current supply and lifecycle status with a distributor

Key specifications

Drain-source voltage: 20 V
Continuous drain current: 45 A at TA=25 °C
On-resistance: 8 mΩ max at VGS=4.5 V, ID=20 A
Package: TO-252

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Low-voltage power switchingLoad switching

Datasheet

caffee2cb6a85f64f75ebd5e06607999_DOD50N02.pdf

800 KB

CAD Models

Download ECAD models for DOD50N02: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD50N02 is a DOINGTER N-channel trench MOSFET in a TO-252 package. Its drain-source voltage rating is 20 V.