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DOD50N06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD50N06 product

DOD50N06

FETs

N-channel MOSFET60 VTO-25215 mΩPower MOSFET

DOD50N06 is a 60 V N-channel TO-252 power MOSFET with 15 mΩ maximum RDS(on) at 10 V gate drive and a 50 A continuous-current rating at TC=25°C.

Best for

  • 60 V low-side power switching
  • Power stages with 10 V gate drive
  • Thermally well-managed TO-252 designs

Avoid if

  • A qualified automotive device is required
  • A guaranteed low RDS(on) at logic-level gate drive below 4.5 V is needed
  • Lifecycle or compliance documentation is mandatory but unavailable

Check before use

  • Confirm junction temperature under actual PCB and heatsinking conditions.
  • Confirm gate-driver source and sink capability for the 47 nC typical total gate charge.
  • Confirm current derating against case temperature and pulsed-current limits.

Key specifications

Drain-source voltage
60 V
Continuous drain current
50 A at TC=25°C
Maximum RDS(on)
15 mΩ at VGS=10 V, ID=30 A
Package
TO-252, 3 pins

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingMotor controlIndustrial switching

Datasheet

1aa3cee6e309dd24c78d193b66a6240a_DOD50N06.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD50N06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD50N06 is a DOINGTER N-channel trench power MOSFET in a 3-pin TO-252 surface-mount package. It is rated for 60 V drain-source voltage and ±20 V gate-source voltage.