DOD50P03 Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DOD50P03 product

DOD50P03 is a TO-252 P-channel MOSFET rated to -30 V and -50 A at TC=25 °C. It specifies 10 mΩ maximum RDS(on) with a -10 V gate drive.

Best for

Low-voltage P-channel power switching
Applications with -10 V gate drive available
TO-252 thermal layouts

Avoid if

Drain-source voltage can exceed -30 V
A guaranteed low RDS(on) is required with gate drive weaker than -4.5 V
Compliance or lifecycle qualification is mandatory but undocumented

Check before use

Maximum VDS and transient voltage
Gate-source voltage limit of ±25 V
RDS(on) at the actual gate-drive voltage and temperature
TO-252 PCB thermal performance

Key specifications

MOSFET type: P-Channel
Drain-source voltage: -30 V
Continuous drain current: -50 A at TC=25 °C
On-resistance: 10 mΩ max at VGS=-10 V, ID=-20 A
Package: TO-252

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power switching

Datasheet

5a298754dd03cd7b5e353d81e5283c4e_DOD50P03.pdf

800 KB

CAD Models

Download ECAD models for DOD50P03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD50P03 is a DOINGTER P-channel trench power MOSFET supplied in a TO-252 surface-mount package. Its rated drain-source voltage is -30 V.