DOD50P06 Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

DOD50P06 product

DOD50P06 is a -60 V P-channel TO-252 power MOSFET specified for up to -50 A continuous drain current and 20 mΩ maximum RDS(on) at -10 V gate drive.

Best for

P-channel high-side switching within a -60 V rating
Power-management and load-switching circuits

Avoid if

A confirmed RoHS, REACH, or lifecycle declaration is mandatory
The application requires a fully characterized board-level thermal rating

Check before use

Use RDS(on) at the actual gate-drive voltage
Validate TO-252 land pattern against the supplied package variant
Keep VGS within ±20 V maximum

Key specifications

MOSFET type: P-Channel
Drain-source voltage: -60 V
Continuous drain current: -50 A at TC=25°C
On-resistance: 20 mΩ max at VGS=-10 V, ID=-20 A
Package: TO-252

Compliance & Environment

RoHS: -
REACH: -
MSL: MSL 3
ECCN: -
HTSUS: -

Application

Power switchingIndustrial load switchingConsumer power management

Datasheet

9962298a84993efa5cf244ca7e6098f6_DOD50P06.pdf

800 KB

CAD Models

Download ECAD models for DOD50P06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD50P06 is a DOINGTER P-channel trench power MOSFET in a 3-pin TO-252 package. Its drain-source voltage rating is -60 V.