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DOD609D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD609D product

DOD609D

FETs

Complementary MOSFETN-channelP-channel40 VTO-252-4Power switching

DOD609D is a complementary 40 V N-channel and P-channel MOSFET pair in TO-252-4. It suits compact power switching where both polarities are required.

Best for

  • Complementary power-switch stages
  • Compact load-switch circuits
  • Power-management circuits requiring N- and P-channel MOSFETs

Avoid if

  • Applications requiring documented automotive qualification
  • Designs needing verified RoHS, REACH, MSL, or lifecycle data
  • Layouts without confirmation of the exact package terminal arrangement

Check before use

  • Use a gate-source voltage within the ±20 V absolute maximum rating
  • Calculate conduction loss using the applicable channel RDS(on) at the chosen gate drive
  • Provide adequate copper area and thermal design for dissipation
  • Confirm package footprint and pin mapping

Key specifications

Configuration
N-channel + P-channel MOSFET pair
N-channel VDS / ID
40 V / 20 A at TC=25°C
P-channel VDS / ID
-40 V / -12 A at TC=25°C
N-channel RDS(on)
25 mOhm max at VGS=10 V, ID=8 A
P-channel RDS(on)
40 mOhm max at VGS=-10 V, ID=-5 A
Package
TO-252-4

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingLoad switchingGeneral power management

Datasheet

1347c8d2beb951619c2fb38cfb487d81_DOD609D.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD609D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD609D is a DOINGTER complementary MOSFET device containing one N-channel MOSFET and one P-channel MOSFET. Both channels have a 40 V drain-source voltage rating in their respective polarities.