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DOD60N02 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD60N02 product

DOD60N02

FETs

N-channel MOSFET20 V60 ATO-252low RDS(on)

DOD60N02 is a 20 V N-channel TO-252 MOSFET specified for low-voltage power switching, with 6.5 mΩ maximum RDS(on) at 4.5 V gate drive.

Best for

  • Low-voltage power switching
  • Power-management load switching
  • Applications with 2.5 V or 4.5 V gate drive

Avoid if

  • Drain-source voltage can exceed 20 V
  • Thermal design cannot support the required current
  • Compliance or lifecycle status must be explicitly documented

Check before use

  • RDS(on) at the actual gate voltage and temperature
  • TO-252 thermal layout and junction temperature
  • Pulsed-current and SOA conditions

Key specifications

Drain-source voltage
20 V
Continuous drain current at TC=25°C
60 A
Maximum RDS(on) at VGS=4.5 V
6.5 mΩ
Package
TO-252

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Low-voltage power switchingPower management

Datasheet

76279d3d1fa513383512d705c6dbda9f_DOD60N02.pdf

800 KB

Datasheet AI

CAD Models

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PCB Footprint
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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD60N02 is a DOINGTER N-channel trench power MOSFET in a TO-252 package. It has a 20 V drain-source rating and is specified for up to 60 A continuous drain current at TC=25°C.