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DOD60N04 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD60N04 product

DOD60N04

MOSFETs - Single

40 V MOSFETN-channel60 ATO-2526.5 mΩ

DOD60N04 is a 40 V N-channel TO-252 power MOSFET specified for up to 60 A at TC=25°C, with 6.5 mΩ maximum RDS(on) at 10 V gate drive.

Best for

  • Low-voltage power switching
  • DC-DC converter switching stages
  • Compact TO-252 power designs

Avoid if

  • Drain-source voltage can approach or exceed 40 V
  • Thermal path cannot support conduction and switching losses
  • A verified lifecycle or compliance declaration is mandatory

Check before use

  • Confirm actual case and junction temperatures under load
  • Use the correct TO-252 footprint for the delivered outline
  • Validate gate-drive timing and switching losses in the application

Key specifications

Drain-source voltage
40 V
Continuous drain current
60 A at TC=25°C
Maximum on-resistance
6.5 mΩ at VGS=10 V, ID=30 A
Package
TO-252

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingDC-DC convertersLoad switching

Datasheet

907de4dbb5b5ff4bc78fc3710c041d2b_DOD60N04.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD60N04: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD60N04 is a DOINGTER N-channel trench power MOSFET in a TO-252 package. It has a 40 V drain-source rating and a 60 A continuous drain-current rating at TC=25°C.