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DOD60P03 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD60P03 product

DOD60P03

MOSFETs

P-channel MOSFET30 V MOSFET60 A MOSFETTO-252

DOD60P03 is a P-channel -30 V MOSFET for high-current switching, specified for up to -60 A continuous drain current at TC=25 °C.

Best for

  • Low-voltage high-current power switching
  • P-channel load switching
  • Motor-control switching stages

Avoid if

  • The application requires a voltage rating above 30 V
  • Thermal conditions cannot support the required current

Check before use

  • VDS and VGS transients
  • RDS(on) at the actual gate voltage and temperature
  • PCB heat dissipation and SOA

Key specifications

Polarity
P-channel MOSFET
Drain-source voltage
-30 V
Continuous drain current
-60 A at TC=25 °C
On-resistance
5.7 mΩ typ. at VGS=-10 V
Package
TO-252

Compliance & Environment

RoHS
-
REACH
-
MSL
MSL3
ECCN
-
HTSUS
-

Application

Power switchingLoad switchingMotor control

Datasheet

bf86d95042e265632e94c4f0afe4c73f_DOD60P03.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD60P03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD60P03 is a P-channel trench MOSFET in a TO-252 package. Its drain-source voltage rating is -30 V and its typical on-resistance is 5.7 mΩ at VGS=-10 V and ID=-20 A.