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DOD68N06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD68N06 product

DOD68N06

MOSFETs - Single

N-channel MOSFET60 V68 ATO-252SGT trench MOSFETlow RDS(on)

DOD68N06 is a 60 V N-channel TO-252 MOSFET with low specified on-resistance and low typical gate charge. It is specified at up to 68 A continuous drain current with the case held at 25°C.

Best for

  • Low-voltage power switching where a 60 V N-channel MOSFET is suitable
  • Designs able to provide a 10 V gate drive for the lowest specified RDS(on)
  • Applications using a TO-252 thermal and PCB footprint

Avoid if

  • Drain-source voltage can approach or exceed 60 V
  • A qualified automotive, RoHS, REACH, or lifecycle status is required without separate verification
  • The design cannot provide adequate heat removal from the TO-252 package

Check before use

  • Maximum drain-source transient voltage and avalanche exposure
  • RDS(on) at the actual gate-source drive voltage and operating temperature
  • Junction temperature under steady-state and pulsed load
  • TO-252 footprint, copper area, and thermal path

Key specifications

Drain-source voltage
60 V
Continuous drain current
68 A at TC=25°C
On-resistance
7.5 mΩ typ., 10 mΩ max. at VGS=10 V and ID=20 A
Package
TO-252

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General low-voltage power switching

Datasheet

40dcd2368bc66b030379bf9872d0145c_DOD68N06.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD68N06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD68N06 is a DOINGTER N-channel power MOSFET using SGT trench technology. It has a 60 V drain-source rating and is supplied in a TO-252 package with three terminals.