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DOD70N06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

DOD70N06 product

DOD70N06

MOSFETs - Single

N-channel MOSFET60 V70 ATO-252Low RDS(on)SGT trench MOSFET

DOD70N06 is a 60 V N-channel TO-252 MOSFET specified for 70 A continuous drain current, with 6 mΩ maximum RDS(on) at a 10 V gate drive.

Best for

  • Low-voltage power switching with a 10 V gate drive
  • Compact TO-252 power stages

Avoid if

  • Drain voltage can exceed 60 V including transient overshoot
  • A verified automotive or other formal qualification is required

Check before use

  • Thermal performance on the actual PCB
  • Gate-drive amplitude and switching waveform
  • Avalanche and transient-energy margin

Key specifications

Drain-source voltage
60 V
Continuous drain current
70 A
On-resistance
4.7 mΩ typ., 6 mΩ max. at VGS = 10 V, ID = 20 A
Package
TO-252

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

DC-DC power switchingMotor and load switchingGeneral low-voltage power control

Datasheet

401a9c5c4c9d010abaa12c8c636792c8_DOD70N06.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for DOD70N06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

DOD70N06 is a DOINGTER N-channel power MOSFET using SGT trench technology. It is supplied in a TO-252 package with pin 1 gate, pin 2 drain, and pin 3 source.